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Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IRG8CH106K10F
Part Number | IRG8CH106K10F |
Datasheet | IRG8CH106K10F datasheet |
Description | IGBT 1200V 110A DIE |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 110A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 700nC |
Td (on/off) @ 25°C | 80ns/380ns |
Test Condition | 600V, 110A, 1 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |