Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SK2719(F)
Part Number | 2SK2719(F) |
Datasheet | 2SK2719(F) datasheet |
Description | MOSFET N-CH 900V 3A TO-3PN |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.3 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |