
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRA9115G0L

| Part Number | DRA9115G0L |
| Datasheet | DRA9115G0L datasheet |
| Description | TRANS PREBIAS PNP 125MW SSMINI3 |
| Manufacturer | Panasonic Electronic Components |
| Series | - |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 125mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | SSMini3-F3-B |