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| Part Number | MBRT40030L |
| Datasheet | MBRT40030L datasheet |
| Description | DIODE SCHOTTKY 30V 200A 3 TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 580mV @ 200A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 3mA @ 30V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |