Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N2907AE4
Part Number | 2N2907AE4 |
Datasheet | 2N2907AE4 datasheet |
Description | DIE TRANS PNP MED PWR GEN PURP T |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 500mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |