Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SCT3120ALGC11
Part Number | SCT3120ALGC11 |
Datasheet | SCT3120ALGC11 datasheet |
Description | MOSFET NCH 650V 21A TO247N |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
Vgs (Max) | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
FET Feature | - |
Power Dissipation (Max) | 103W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |