Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / CDBGBSC201200-G
Part Number | CDBGBSC201200-G |
Datasheet | CDBGBSC201200-G datasheet |
Description | DIODE DUAL SILICON CARBIDE POWER |
Manufacturer | Comchip Technology |
Series | - |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) (per Diode) | 25.9A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 100µA @ 1200V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |