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| Part Number | PMXB65UPEZ |
| Datasheet | PMXB65UPEZ datasheet |
| Description | MOSFET P-CH 12V 3.2A DFN1010D-3G |
| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 72 mOhm @ 3.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 634pF @ 6V |
| FET Feature | - |
| Power Dissipation (Max) | 317mW (Ta), 8.33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN1010D-3 |
| Package / Case | 3-XDFN Exposed Pad |