Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYQ40N65C3D1
Part Number | IXYQ40N65C3D1 |
Datasheet | IXYQ40N65C3D1 datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX3™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 180A |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 40A |
Power - Max | 300W |
Switching Energy | 830µJ (on), 650µJ (off) |
Input Type | Standard |
Gate Charge | 66nC |
Td (on/off) @ 25°C | 23ns/110ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 40ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P |