Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1489EDH-T1-GE3
Part Number | SI1489EDH-T1-GE3 |
Datasheet | SI1489EDH-T1-GE3 datasheet |
Description | MOSFET P-CH 8V 2A SOT-363 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 48 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.56W (Ta), 2.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-363 |
Package / Case | 6-TSSOP, SC-88, SOT-363 |