Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN1B04FU-GR,LF
Part Number | HN1B04FU-GR,LF |
Datasheet | HN1B04FU-GR,LF datasheet |
Description | TRANS NPN/PNP 50V 0.15A US6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 200mW |
Frequency - Transition | 150MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |