Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN2011UFDF-7
Part Number | DMN2011UFDF-7 |
Datasheet | DMN2011UFDF-7 datasheet |
Description | MOSFET N-CH 20V 14.2A UDFN2020-6 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 14.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 2248pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | U-DFN2020-6 (Type F) |
Package / Case | 6-UDFN Exposed Pad |