Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5809US
Product Introduction
1N5809US
- Part Number
- 1N5809US
- Manufacturer/Brand
- Microsemi Corporation
- Description
- DIODE GEN PURP 100V 3A B-MELF
- Category
- Diodes - Rectifiers - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 7pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | 1N5809US |
| Datasheet | 1N5809US datasheet |
| Description | DIODE GEN PURP 100V 3A B-MELF |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
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