Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RFD4N06LSM9A
Part Number | RFD4N06LSM9A |
Datasheet | RFD4N06LSM9A datasheet |
Description | MOSFET N-CH 60V 4A DPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |