Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP2M009A090FG

Product Introduction

GP2M009A090FG

Part Number
GP2M009A090FG
Manufacturer/Brand
Global Power Technologies Group
Description
MOSFET N-CH 900V 9A TO220F
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4497pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number GP2M009A090FG
Description MOSFET N-CH 900V 9A TO220F
Manufacturer Global Power Technologies Group
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 25V
FET Feature -
Power Dissipation (Max) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

Latest Products for Transistors - FETs, MOSFETs - Single

IRFU4105PBF

Infineon Technologies

MOSFET N-CH 55V 27A I-PAK

IRFU4105Z

Infineon Technologies

MOSFET N-CH 55V 30A I-PAK

IRFU4510PBF

Infineon Technologies

MOSFET N CH 100V 56A IPAK

IRFU4615PBF

Infineon Technologies

MOSFET N-CH 150V 33A IPAK

IRFU4620PBF

Infineon Technologies

MOSFET N-CH 200V 24A IPAK

IRFU48ZPBF

Infineon Technologies

MOSFET N-CH 55V 42A I-PAK