Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT100GN60B2G
Part Number | APT100GN60B2G |
Datasheet | APT100GN60B2G datasheet |
Description | IGBT 600V 229A 625W TMAX |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 229A |
Current - Collector Pulsed (Icm) | 300A |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 100A |
Power - Max | 625W |
Switching Energy | 4.7mJ (on), 2.675mJ (off) |
Input Type | Standard |
Gate Charge | 600nC |
Td (on/off) @ 25°C | 31ns/310ns |
Test Condition | 400V, 100A, 1 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |