Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB160N04S3H2ATMA1
Part Number | IPB160N04S3H2ATMA1 |
Datasheet | IPB160N04S3H2ATMA1 datasheet |
Description | MOSFET N-CH 40V 160A TO263-7 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |