Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SB1457(T6CNO,A,F)
Part Number | 2SB1457(T6CNO,A,F) |
Datasheet | 2SB1457(T6CNO,A,F) datasheet |
Description | TRANS PNP 2A 100V TO226-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Power - Max | 900mW |
Frequency - Transition | 50MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |