Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPA80R1K4P7XKSA1
Part Number | IPA80R1K4P7XKSA1 |
Datasheet | IPA80R1K4P7XKSA1 datasheet |
Description | MOSFET N-CH 800V 4A TO220 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 500V |
FET Feature | Super Junction |
Power Dissipation (Max) | 24W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3F |
Package / Case | TO-220-3 Full Pack |