Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPC8129,LQ(S
Part Number | TPC8129,LQ(S |
Datasheet | TPC8129,LQ(S datasheet |
Description | MOSFET P-CH 30V 9A 8SOP |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | +20V, -25V |
Input Capacitance (Ciss) (Max) @ Vds | 1650pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |