Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / GSID600A120S4B1
Part Number | GSID600A120S4B1 |
Datasheet | GSID600A120S4B1 datasheet |
Description | SILICON IGBT MODULES |
Manufacturer | Global Power Technologies Group |
Series | Amp+™ |
Part Status | Active |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 1130A |
Power - Max | 3060W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 600A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 51nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |