
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / BCR22PNE6327BTSA1

| Part Number | BCR22PNE6327BTSA1 |
| Datasheet | BCR22PNE6327BTSA1 datasheet |
| Description | TRANS NPN/PNP PREBIAS SOT363 |
| Manufacturer | Infineon Technologies |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 130MHz |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package | PG-SOT363-6 |