Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CSD19537Q3
Part Number | CSD19537Q3 |
Description | MOSFET N-CH 100V 50A 8VSON |
Manufacturer | Texas Instruments |
Series | NexFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (3.3x3.3) |
Package / Case | 8-PowerVDFN |