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Product Introduction

IPB180N04S4L01ATMA1

Part Number
IPB180N04S4L01ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH TO263-7
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101, OptiMOS™
Quantity
1690pcs Stock Available.

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Product Specifications

Part Number IPB180N04S4L01ATMA1
Description MOSFET N-CH TO263-7
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 245nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 19100pF @ 25V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)

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