Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTA113EMB,315
Part Number | PDTA113EMB,315 |
Description | TRANS PREBIAS PNP 250MW 3DFN |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 180MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | DFN1006B-3 |