Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PSMN4R3-100ES,127
Part Number | PSMN4R3-100ES,127 |
Datasheet | PSMN4R3-100ES,127 datasheet |
Description | MOSFET N-CH 100V 120A I2PAK |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 338W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |