Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC643TUT106
Part Number | DTC643TUT106 |
Datasheet | DTC643TUT106 datasheet |
Description | TRANS PREBIAS NPN 200MW UMT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | UMT3 |