Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM60NB099CZ C0G

Product Introduction

TSM60NB099CZ C0G

Part Number
TSM60NB099CZ C0G
Manufacturer/Brand
Taiwan Semiconductor Corporation
Description
MOSFET N-CHANNEL 600V 38A TO220
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
939pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TSM60NB099CZ C0G
Datasheet TSM60NB099CZ C0G datasheet
Description MOSFET N-CHANNEL 600V 38A TO220
Manufacturer Taiwan Semiconductor Corporation
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V
FET Feature -
Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

Latest Products for Transistors - FETs, MOSFETs - Single

IRFD9113

Vishay Siliconix

MOSFET P-CH 60V 600MA 4-DIP

IRFD9120

Vishay Siliconix

MOSFET P-CH 100V 1A 4-DIP

IRFD9210

Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

IRFD9220

Vishay Siliconix

MOSFET P-CH 200V 0.56A 4-DIP

IRFDC20

Vishay Siliconix

MOSFET N-CH 600V 320MA 4-DIP

IRLD014

Vishay Siliconix

MOSFET N-CH 60V 1.7A 4-DIP

Related Products