Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD112TF

Product Introduction

MJD112TF

Part Number
MJD112TF
Manufacturer/Brand
ON Semiconductor
Description
TRANS NPN DARL 100V 2A DPAK
Category
Transistors - Bipolar (BJT) - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2117pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MJD112TF
Datasheet MJD112TF datasheet
Description TRANS NPN DARL 100V 2A DPAK
Manufacturer ON Semiconductor
Series -
Part Status Last Time Buy
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak

Latest Products for Transistors - Bipolar (BJT) - Single

BCX6825E6327HTSA1

Infineon Technologies

TRANS NPN 20V 1A SOT-89

BCX6910E6327HTSA1

Infineon Technologies

TRANS PNP 20V 1A SOT-89

BCX6916E6327HTSA1

Infineon Technologies

TRANS PNP 20V 1A SOT-89

BCX6925E6327HTSA1

Infineon Technologies

TRANS PNP 20V 1A SOT-89

BFN 19 E6327

Infineon Technologies

TRANS PNP 300V 0.2A SOT-89

BFN18E6327HTSA1

Infineon Technologies

TRANS NPN 300V 0.2A SOT-89