Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RS1E200GNTB
Part Number | RS1E200GNTB |
Datasheet | RS1E200GNTB datasheet |
Description | MOSFET N-CH 30V 20A 8-HSOP |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 25.1W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSOP |
Package / Case | 8-PowerTDFN |