
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MMUN2215LT1

| Part Number | MMUN2215LT1 |
| Datasheet | MMUN2215LT1 datasheet |
| Description | TRANS PREBIAS NPN 246MW SOT23-3 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 246mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |