Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / TRS12E65C,S1Q
Part Number | TRS12E65C,S1Q |
Datasheet | TRS12E65C,S1Q datasheet |
Description | DIODE SCHOTTKY 650V 12A TO220-2L |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) | 12A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 12A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 90µA @ 170V |
Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2L |
Operating Temperature - Junction | 175°C (Max) |