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Product Introduction
EPC2106ENGRT
- Part Number
- EPC2106ENGRT
- Manufacturer/Brand
- EPC
- Description
- GAN TRANS 2N-CH 100V BUMPED DIE
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- eGaN®
- Quantity
- 7623pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | EPC2106ENGRT |
| Datasheet | EPC2106ENGRT datasheet |
| Description | GAN TRANS 2N-CH 100V BUMPED DIE |
| Manufacturer | EPC |
| Series | eGaN® |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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