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Product Introduction

TSM120N06LCR RLG

Part Number
TSM120N06LCR RLG
Manufacturer/Brand
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 60V 54A 8PDFN
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
34pcs Stock Available.

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Product Specifications

Part Number TSM120N06LCR RLG
Datasheet TSM120N06LCR RLG datasheet
Description MOSFET N-CH 60V 54A 8PDFN
Manufacturer Taiwan Semiconductor Corporation
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2116pF @ 30V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN

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