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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / VMO550-01F
Part Number | VMO550-01F |
Datasheet | VMO550-01F datasheet |
Description | MOSFET N-CH 100V 590A Y3-DCB |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 590A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 6V @ 110mA |
Gate Charge (Qg) (Max) @ Vgs | 2000nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2200W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | Y3-DCB |
Package / Case | Y3-DCB |