
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N3440U4

| Part Number | 2N3440U4 |
| Datasheet | 2N3440U4 datasheet |
| Description | POWER BJT |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 5W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | U4 |