Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCU850N80Z
Part Number | FCU850N80Z |
Datasheet | FCU850N80Z datasheet |
Description | MOSFET N-CH 800V 6A IPAK |
Manufacturer | ON Semiconductor |
Series | SuperFET® II |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1315pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |