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Product Introduction

TSM60NB190CM2 RNG

Part Number
TSM60NB190CM2 RNG
Manufacturer/Brand
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 600V 18A TO263
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
994pcs Stock Available.

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Product Specifications

Part Number TSM60NB190CM2 RNG
Datasheet TSM60NB190CM2 RNG datasheet
Description MOSFET N-CH 600V 18A TO263
Manufacturer Taiwan Semiconductor Corporation
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
FET Feature -
Power Dissipation (Max) 150.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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