Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM60NB1R4CH C5G
Part Number | TSM60NB1R4CH C5G |
Datasheet | TSM60NB1R4CH C5G datasheet |
Description | MOSFET N-CHANNEL 600V 3A TO251 |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 900mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.12nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 257.3pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 28.4W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 (IPAK) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |