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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPSA70R950CEAKMA1
Part Number | IPSA70R950CEAKMA1 |
Datasheet | IPSA70R950CEAKMA1 datasheet |
Description | MOSFET N-CH 700V 8.7A TO251-3 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3-347 |
Package / Case | TO-251-3 Stub Leads, IPak |