Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AUIRF1018ES

Product Introduction

AUIRF1018ES

Part Number
AUIRF1018ES
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 60V 79A D2PAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
HEXFET®
Quantity
9342pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number AUIRF1018ES
Datasheet AUIRF1018ES datasheet
Description MOSFET N-CH 60V 79A D2PAK
Manufacturer Infineon Technologies
Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Latest Products for Transistors - FETs, MOSFETs - Single

IPB100N04S303ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

IPB100N06S205ATMA4

Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

IPB120N04S401ATMA1

Infineon Technologies

MOSFET N-CH 40V 120A TO263-3-2

IPB123N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 58A TO263-3

IPB320N20N3GATMA1

Infineon Technologies

MOSFET N-CH 200V 34A TO263-3

IPB60R099C6ATMA1

Infineon Technologies

MOSFET N-CH 600V 37.9A TO263

Related Products