Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFD9010PBF

Product Introduction

IRFD9010PBF

Part Number
IRFD9010PBF
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 50V 1.1A 4-DIP
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3649pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRFD9010PBF
Datasheet IRFD9010PBF datasheet
Description MOSFET P-CH 50V 1.1A 4-DIP
Manufacturer Vishay Siliconix
Series -
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500 mOhm @ 580mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)

Latest Products for Transistors - FETs, MOSFETs - Single

TK2A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 2A TO-220SIS

TK3A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2.5A TO-220SIS

TK3A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3A TO-220SIS

TK3A65DA(STA4,QM)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 2.5A TO-220SIS

TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 4A TO-220SIS

TK4A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 4A TO-220SIS

Related Products