Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK3A60DA(STA4,Q,M)

Product Introduction

TK3A60DA(STA4,Q,M)

Part Number
TK3A60DA(STA4,Q,M)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 2.5A TO-220SIS
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
π-MOSVII
Quantity
2911pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TK3A60DA(STA4,Q,M)
Datasheet TK3A60DA(STA4,Q,M) datasheet
Description MOSFET N-CH 600V 2.5A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

Latest Products for Transistors - FETs, MOSFETs - Single

TPH3208PS

Transphorm

GANFET N-CH 650V 20A TO220

TPH3208PD

Transphorm

GANFET N-CH 650V 20A TO220

TPH3202PD

Transphorm

GANFET N-CH 600V 9A TO220

TPH3202PS

Transphorm

GANFET N-CH 600V 9A TO220

TPH3208LDG

Transphorm

GANFET N-CH 650V 20A PQFN

TPH3206LSB

Transphorm

GANFET N-CH 650V 16A PQFN