Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCP190N65F
Part Number | FCP190N65F |
Datasheet | FCP190N65F datasheet |
Description | MOSFET N-CH 650V 20.6A TO220-3 |
Manufacturer | ON Semiconductor |
Series | FRFET®, SuperFET® II |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3225pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |