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Part Number | TPC6010-H(TE85L,FM |
Datasheet | TPC6010-H(TE85L,FM datasheet |
Description | MOSFET N-CH 60V 6.1A VS6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 59 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-6 (2.9x2.8) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |