![JieTai](/logo.png?v1)
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQJ0303PGDQA#H6
Part Number | RQJ0303PGDQA#H6 |
Datasheet | RQJ0303PGDQA#H6 datasheet |
Description | MOSFET P-CH 30V 3.3A 3MPAK |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-MPAK |
Package / Case | TO-236-3, SC-59, SOT-23-3 |