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Product Introduction

SIRC06DP-T1-GE3

Part Number
SIRC06DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 30V
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET® Gen IV
Quantity
6199pcs Stock Available.

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Product Specifications

Part Number SIRC06DP-T1-GE3
Description MOSFET N-CH 30V
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2455pF @ 15V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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