Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / MMIX1X200N60B3H1
Part Number | MMIX1X200N60B3H1 |
Datasheet | MMIX1X200N60B3H1 datasheet |
Description | IGBT 600V 175A 520W SMPD |
Manufacturer | IXYS |
Series | GenX3™, XPT™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 175A |
Current - Collector Pulsed (Icm) | 1000A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
Power - Max | 520W |
Switching Energy | 2.85mJ (on), 2.9mJ (off) |
Input Type | Standard |
Gate Charge | 315nC |
Td (on/off) @ 25°C | 48ns/160ns |
Test Condition | 360V, 100A, 1 Ohm, 15V |
Reverse Recovery Time (trr) | 100ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 24-PowerSMD, 21 Leads |
Supplier Device Package | 24-SMPD |