Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXBT12N300

Product Introduction

IXBT12N300

Part Number
IXBT12N300
Manufacturer/Brand
IXYS
Description
IGBT 3000V 30A 160W TO268
Category
Transistors - IGBTs - Single
RoHs Status
Lead free / RoHS Compliant
Series
BIMOSFET™
Quantity
195pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IXBT12N300
Datasheet IXBT12N300 datasheet
Description IGBT 3000V 30A 160W TO268
Manufacturer IXYS
Series BIMOSFET™
Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 3000V
Current - Collector (Ic) (Max) 30A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 12A
Power - Max 160W
Switching Energy -
Input Type Standard
Gate Charge 62nC
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) 1.4µs
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268

Latest Products for Transistors - IGBTs - Single

APT65GP60B2G

Microsemi Corporation

IGBT 600V 100A 833W TMAX

APT45GP120B2DQ2G

Microsemi Corporation

IGBT 1200V 113A 625W TMAX

APT33GF120B2RDQ2G

Microsemi Corporation

IGBT 1200V 64A 357W TMAX

APT100GN120B2G

Microsemi Corporation

IGBT 1200V 245A 960W TMAX

APT25GN120B2DQ2G

Microsemi Corporation

IGBT 1200V 67A 272W TMAX

APT68GA60B2D40

Microsemi Corporation

IGBT 600V 121A 520W TO-247