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| Part Number | TSM680P06DPQ56 RLG |
| Datasheet | TSM680P06DPQ56 RLG datasheet |
| Description | MOSFET 2 P-CH 60V 12A 8PDFN |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 68 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 30V |
| Power - Max | 3.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFN (5x6) |