Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / TSM680P06DPQ56 RLG
Part Number | TSM680P06DPQ56 RLG |
Datasheet | TSM680P06DPQ56 RLG datasheet |
Description | MOSFET 2 P-CH 60V 12A 8PDFN |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 30V |
Power - Max | 3.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-PDFN (5x6) |